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HAT2033R/HAT2033RJ
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-664B (Z) 3rd. Edition February 1999 Features
* * * * For Automotive Application ( at Type Code "J ") Low on-resistance Capable of 4 V gate drive High density mounting
Outline
HAT2033R/HAT2033RJ
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT2033R HAT2033RJ Avalanche energy HAT2033R HAT2033RJ Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg
Note2
Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note4 Note1
Ratings 60 20 7 56 7 -- 7
Unit V V A A A -- A -- mJ W C C
EAR
Note4
-- 4.2 2.5 150 -55 to +150
1. PW 10s, duty cycle 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. Value at Tch=25C, Rg 50
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HAT2033R/HAT2033RJ
Electrical Characteristics (Ta = 25C)
Item Symbol Min 60 20 -- -- -- -- -- 1.2 -- -- 6.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- 0.03 0.04 10 740 370 130 13 55 140 95 0.82 45 Max -- -- 10 1 0.1 -- 10 2.2 0.038 0.053 -- -- -- -- -- -- -- -- 1.07 -- Unit V V A A A A A V S pF pF pF ns ns ns ns V ns IF = 7A, VGS = 0 Note4 IF =7A, VGS = 0 diF/ dt =50A/s VDS =48V, VGS = 0 Ta=125C VDS = 10V, I D = 1mA I D = 4A, VGS = 10V Note4 I D = 4A, VGS = 4V Note4 I D = 4A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz VGS =10V, ID = 4A VDD 30V Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = 60V, VGS = 0 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT2033R HAT2033RJ HAT2033R HAT2033RJ I GSS I DSS I DSS I DSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test
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HAT2033R/HAT2033RJ
Main Characteristics
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HAT2033R/HAT2033RJ
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HAT2033R/HAT2033RJ
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HAT2033R/HAT2033RJ
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HAT2033R/HAT2033RJ
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HAT2033R/HAT2033RJ
Package Dimensions
Unit: mm
9
HAT2033R/HAT2033RJ
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
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